The ePowerTM Stage IC Product Family integrates input logic interface, high-side level
shifting, synchronous bootstrap charging, and gate drivers along with eGaN output
FETs into one monolithic integrated circuit in an MSL1 QFN package, using EPC’s
proprietary GaN IC technology. The result is a Power Stage IC that translates logic level
control signals into a high voltage and high current power stage, which is simpler to
design, smaller in size and easier to manufacture while being more efficient to operate.
EPC33110 upcoming features:
3× gate drivers + 6× eGaN® FETs with integrated level shifters and bootstraps
Independent logic inputs (per half-bridge) with 3.3 V or 5 V CMOS-compatible thresholds
Anti shoot-through architecture; logic lockout defaults both FETs off under fault/illegal states
Synchronous bootstrap (high-side) charging for robust high-side drive
dv/dt and switching behavior tuned for motor drive operation
Fast shutdown function disables immediately PWM in fault condition
Active low Fault input and 100% ON capability allows over-modulation
Power-on reset disables outputs when VDD or VBOOT are below threshold; undervoltage lockouts secured
False-trigger immunity for fast-switching transients; robust level shifters for hard/soft switching
Thermally enhanced QFN with exposed top for low thermal resistance to top-side heatsinking